| PART |
Description |
Maker |
| GN1A4P GN1A4P-T1 GN1A4P-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC[NEC]
|
| GA1F4M GA1F4M-T2 GA1F4M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
| GA1A4P GA1A4P-T1 GA1A4P-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
| GN1L3N GN1L3N-T2 GN1L3N-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GN1A3Q GN1A3Q-T1 GN1A3Q-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
|
NEC
|
| 2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system
Medium power Transistor(-32V/ -2A)
Medium power Transistor(-32V, -2A) 中等功率晶体管（- 32V的，- 2A型）
|
Rohm Co., Ltd.
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| AN1L3M AN1L3M-T AN1L3M-T/JD AN1L3M-T/JM AN1L3MC AN |
on-chip resistor PNP silicon epitaxial transistor 芯片电阻进步党硅外延晶体
Hybrid transistor
|
NEC, Corp.
|
